Antiferromagnetic phase in doped semiconductors near the insulator-metal phase transition

Physica Status Solidi C: Conferences

Volumn 3, Issue 2, 2006, Pages 347-351

  Veinger, A I ^a   Zabrodskii, A G ^a   Tisnek, T V ^a   Goloshchapov, S I ^a   Mokhov, E N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; ELECTRONS; PARAMAGNETIC RESONANCE; PHASE TRANSITIONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; ELECTRON SPIN RESONANCE SPECTROSCOPY; GERMANIUM; SILICON CARBIDE;

ANTIFERROMAGNETIC PHASE; CURIE-WEISS BEHAVIOUR; INSULATOR-METAL PHASE TRANSITION; SEMICONDUCTORS MANIFESTATION;

METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES;

ANTIFERROMAGNETIC PHASE; ANTIFERROMAGNETIC SPINS; CURIE-WEISS BEHAVIOUR; DOPED SEMICONDUCTORS; INSULATOR-METAL PHASE; INSULATOR-METAL TRANSITION; N-TYPE SEMICONDUCTORS; POTENTIAL FLUCTUATIONS;

EID: 32944468487     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200562762     Document Type: Conference Paper

References (5)

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3. B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
4. A.G. Zabrodskii, Philos. Mag. 81, 1131 (2001).
5. L.M. Roth. Phys. Rev. 118, 1534 (1960).