Revisiting the use of SiC as a post irradiation temperature monitor

ASTM Special Technical Publication

Volumn , Issue 1447, 2004, Pages 623-633

  Snead, Lance L ^a   Williams, A Marie ^a   Qualls, A L ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Electrical conductivity; Electrical resistivity; Irradiation; Silicon carbide; Temperature monitor

Indexed keywords

AMORPHIZATION; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; IRRADIATION; THERMAL EFFECTS;

ELECTRICAL CONDUCTIVITY; ELECTRICAL RESISTIVITY; IRRADIATION TEMPERATURES; TEMPERATURE MONITOR;

SILICON CARBIDE;

EID: 32944455099     PISSN: 00660558     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1520/stp11262s     Document Type: Conference Paper

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