Meeting the critical cleaning challenges for 65 NM and beyond using a single wafer processing with novel megasonics and drying technologies

ECS Transactions

Volumn 1, Issue 3, 2006, Pages 172-179

  Park, I S ^a   Choi, S J ^a   Hong, C K ^a   Cho, H K ^a   Lu, Y Q ^b   Baiya, E ^b   Rosato, J J ^b   Yalamanchili, M R ^b   Hansen, E ^b  

^a SAMSUNG Electronics   (South Korea)

^b Akrion   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; DRY CLEANING; DRYING; ETCHING; POLYSILICON; TRANSDUCERS;

MEGASONIC TRANSDUCERS; PARTICLE REMOVAL EFFICIENCY; SINGLE WAFER TOOLS; WATERMARK-FREE PERFORMANCE;

SILICON WAFERS;

EID: 32844466710     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. J. Rosato, To be presented in 207th ECS meeting, Quebec City, Canada, May, 2005
3. Y. Sugita et. al., Semicond. Manuf., 6 (3), 34, (2005).
4. ITRS, International Sematech Publications, Austin, TX, (2004).
5. C. Osburn, et al., IBM J. of Res. Dev., 46 (2/3), (2002)
6. K. Christenson, in Surface preparation and Cleaning/2005, p 12.
7. th International Symposium on Ultra Clean Processing of Silicon Surfaces/2004, J. Ruzyllo, et al. Editors, p131
8. Y. Lu et al. In Cleaning Technology in Semicond. Dev. Manufacturing/2002, J. Ruzyllo, T. Hattori, R. Opila, and R.E. Novak, Editors, PV 2003-26, p.49
9. th International Symposium on Ultra Clean Processing of Silicon Surfaces/2004, J. Ruzyllo, et al. Editors, p12.