Variation of Nd and Vfb for different compositions of CdSexTe1-x thin films by pulse plating technique

Physica B: Condensed Matter

Volumn 373, Issue 2, 2006, Pages 233-239

  Saaminathan, V ^a   Murali, K R ^b  

^a MULTIMEDIA UNIVERSITY   (Malaysia)

^b CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

Author keywords

Carrier concentration; Flat band potential; Pulse plating; Semiconductor; Thin films

Indexed keywords

ELECTRODEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; STAINLESS STEEL; TITANIUM; X RAY DIFFRACTION;

FLAT BAND POTENTIAL; POTENTIOSTATIC MODE; PULSE PLATING; SEMICONDUCTOR PARAMETERS;

THIN FILMS;

EID: 32844465331     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.11.149     Document Type: Article

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