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Volumn 41, Issue 2, 2006, Pages 163-167

Investigation on defects in Lu2SiO5:Ce crystals grown by Czochralski method

Author keywords

LSO crystals; Scattering particles; Strips; Un stoichiometry

Indexed keywords

CRYSTAL ORIENTATION; IRIDIUM; LUTETIUM COMPOUNDS; SILICATES; X RAY DIFFRACTION;

EID: 32644450950     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200510549     Document Type: Article
Times cited : (13)

References (7)
  • 2
    • 32644435858 scopus 로고
    • Lutetium orthosilicate single crystal scintillator detectors, U.S. Patent No.4,958,080 and 5,025,151
    • C. L. Melcher, Lutetium orthosilicate single crystal scintillator detectors, U.S. Patent No.4,958,080 (1990) and 5,025,151 (1991).
    • (1990)
    • Melcher, C.L.1
  • 7
    • 32644447693 scopus 로고
    • (in Chinese), Shanghai scientific and technological press, Shanghai
    • Min Naiben, "Physical principle for the crystal growth", (in Chinese), Shanghai scientific and technological press, Shanghai, 1982:149
    • (1982) Physical Principle for the Crystal Growth , pp. 149
    • Naiben, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.