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Volumn 252, Issue 10, 2006, Pages 3428-3435
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Electron scattering mechanisms in indium-tin-oxide thin films prepared at the various process conditions
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Author keywords
Carrier concentration; Carrier mobility; DC magnetron sputtering; Hall measurement; Indium tin oxide (ITO); Scattering; Surface roughness
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Indexed keywords
CARRIER CONCENTRATION;
CARRIER MOBILITY;
ELECTRON SCATTERING;
HALL EFFECT;
INDIUM COMPOUNDS;
MAGNETRON SPUTTERING;
SURFACE ROUGHNESS;
TIN COMPOUNDS;
X RAY DIFFRACTION ANALYSIS;
DC MAGNETRON SPUTTERING;
INDIUM-TIN-OXIDE (ITO);
THIN FILMS;
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EID: 32644448545
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2005.03.203 Document Type: Article |
Times cited : (37)
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References (24)
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