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Volumn 252, Issue 10, 2006, Pages 3428-3435

Electron scattering mechanisms in indium-tin-oxide thin films prepared at the various process conditions

Author keywords

Carrier concentration; Carrier mobility; DC magnetron sputtering; Hall measurement; Indium tin oxide (ITO); Scattering; Surface roughness

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON SCATTERING; HALL EFFECT; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; SURFACE ROUGHNESS; TIN COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

EID: 32644448545     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.03.203     Document Type: Article
Times cited : (37)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.