Epitaxial thickening by hot wire chemical vapor deposition of polycrystalline silicon seed layers on glass

Thin Solid Films

Volumn 501, Issue 1-2, 2006, Pages 335-337

  Stradal, J ^a,b   Scholma, G ^a   Li, H ^a   Van Der Werf, C H M ^a   Rath, J K ^a   Widenborg, P I ^b   Campbell, P ^b   Aberle, A G ^b   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Aluminium induced crystallization; Hot wire deposition; Low temperature epitaxial growth; Poly Si

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; GLASS; X RAY DIFFRACTION ANALYSIS;

ALUMINIUM INDUCED CRYSTALLIZATION; HOT WIRE DEPOSITION; LOW TEMPERATURE EPITAXIAL GROWTH;

POLYSILICON;

EID: 32644446038     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.220     Document Type: Conference Paper

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