Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN

Journal of Electronic Materials

Volumn 35, Issue 1, 2006, Pages 107-112

  Kim, Ho Gyoung ^a   Kim, Sang Ho ^b   Deb, Parijat ^b   Sands, Tim ^b  

^a PURDUE UNIVERSITY   (United States)

^b Purdue University   (United States)

Author keywords

KOH treatment; Pt n GaN; Schottky barrier height; Surface states

Indexed keywords

KOH TREATMENT; PT/N-GAN; SCHOTTKY BARRIER HEIGHT; SURFACE STATES;

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; LEAKAGE CURRENTS; PLATINUM; SCHOTTKY BARRIER DIODES;

POTASSIUM COMPOUNDS;

EID: 32644432383     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0191-0     Document Type: Conference Paper

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