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Volumn 12, Issue 1, 2006, Pages 25-26
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IEDM showcases power HFETs
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NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRODES;
FABRICATION;
GALLIUM NITRIDE;
SILICON CARBIDE;
SUBSTRATES;
GATE-DRAIN REGIONS;
SIC SUBSTRATES;
TRAP CREATION;
TRAPPING;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 32444439533
PISSN: 1096598X
EISSN: None
Source Type: Trade Journal
DOI: None Document Type: Review |
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Times cited : (2)
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References (0)
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