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Volumn 71, Issue 14, 1993, Pages 2276-2279

Energetics of GaAs(100)-(2×4) and -(4×2) reconstructions

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EID: 3242886097     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.71.2276     Document Type: Article
Times cited : (215)

References (23)
  • 19
    • 84927904210 scopus 로고    scopus 로고
    • The reaction γ ( 2 times 4 ) -> case 3 over 4 β ( 2 times 4 ) + case 1 over 4 c ( 4 times 4 ) is exothermic: Δ E = 0.06 eV/(1 times 1). Our result for the relative energies of the β ( 2 times 4 ) and γ ( 2 times 4 ) surfaces is slightly different from that obtained in Ref. [7]. We find that the chemical potential for which these two surfaces have equal formation energies is much closer to the As-rich limit than reported in Ref. [7]. Our result, that the formation energies are very similar in the As-rich limit, can be understood by noting that the local bonding environment of the As atoms is not significantly altered when As is removed from a bulk As reservoir and added to the β ( 2 times 4 ) surface to form the γ ( 2 times 4 ).
  • 23
    • 84927904209 scopus 로고    scopus 로고
    • The energy for a (2 times 1) ordering of the Ga atoms is slightly higher [by 0.02 eV(1 times 1)] than the c ( 2 times 2 ). The ( 2 times 1) ordered structure is stable with respect to a dimerization of the Ga atoms which would create a (2 times 2) structure.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.