Structures of As-rich GaAs(001)-(2 × 4) reconstructions

Physical Review Letters

Volumn 73, Issue 16, 1994, Pages 2208-2211

  Hashizume, Tomihiro ^a   Xue, Q K ^a   Zhou, J ^a   Ichimiya, A ^a,b   Sakurai, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3242876584     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.73.2208     Document Type: Article

References (26)

1. Dramatic work function variations of molecular-beam epitaxially grown GaAs(100) surfaces
2. Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfaces
3. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy