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Volumn 564, Issue 1-3, 2004, Pages 156-164

Morphology, structure, and electronic properties of Ce@C82 films on Ag:Si(1 1 1)-(√3×3)R30°

(12) Wang, L a Schulte, K a Woolley, R A J a Kanai, M b Dennis, T J S b Purton, J c Patel, S c Gorovikov, S d Dhanak, V R c,e Smith, E F a Cowie, B C C f Moriarty, P a

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b QUEEN MARY UNIVERSITY OF LONDON (United Kingdom)

c DARESBURY LABORATORY (United Kingdom)

d LUND UNIVERSITY (Sweden)

e UNIVERSITY OF LIVERPOOL (United Kingdom)

f EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

Author keywords

Fullerenes; Photoemission (total yield); Scanning tunneling microscopy

Indexed keywords

CARBON; FULLERENES; MONOLAYERS; MULTILAYERS; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; SILVER; THIN FILMS;

CRYSTALLOGRAPHIC AXES; PHOTOEMISSION (TOTAL YIELD); VALENCE STATE;

CERIUM;

EID: 3242875646 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2004.06.189 Document Type: Article

Times cited : (18)

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