High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

Electronics Letters

Volumn 32, Issue 11, 1996, Pages 1037-1038

  Mahajan, A ^a   Fay, P ^a   Caneau, C ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

Carrier mobility; High electron mobility transistors

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC NETWORK ANALYZERS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

CARRIER MOBILITY; DRAIN CURRENT; GATE VOLTAGE; HALL EFFECT MEASUREMENTS; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3242840395     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960652     Document Type: Article

References (6)

1. TONG, M., NUMMILA, K., SEO, J.-W., KETTERSON, A., and ADESIDA, I.: 'Process for enhancement/depletion-mode GaAs/InGaAs/AlGaAs pseudomorphic MODFETs using selective wet gate recessing', Electron. Lett., 1992, 28, pp. 1633-1634
2. HARADA, N., KURODA, S., KATAKAMI, T., HIKOSAKA, K., MIMURA, T., and ABE, M.: 'Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration'. Proc. 3rd Int. Conf. InP and Related Materials, 1991, pp. 377-350
3. WILKS, S., JENKINGS, L., MORRIS, J., CLARK, S., and WILLIAMS, R.: ". Proc. 3rd Int. Conf. InP and Related Materials, 1991, pp. 147
4. 0.52As layers', Appl. Phys. Lett., 1994, 65, pp. 755-757
5. PALMATEER, L.F., TASKER, P.J., SCHAFF, W.J., NGUYEN, L.D., and EASTMAN, L.F.: 'DC and RF measurments of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistors', Appl. Phys. Lett., 1989, 54, pp. 2139-2141
6. TONG, M., NUMMILA, K., KETTERSON, A., ADESIDA, I., CANEAU, C., and BHAT, R.: 'InAlAs/InGaAs/InP MODFETs with uniform threshold voltage obtained by selective wet gate recess', Electron. Lett., 1992, 13, pp. 525-527