Integration of microlensed LED and double heterojunction bipolar transistors for transmitter OEIC

Electronics Letters

Volumn 32, Issue 19, 1996, Pages 1821-1823

  Yang, O Seung ^a   Hong, Song Cheol ^a   Kwon, Young Se ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Aluminium gallium arsenide; Bipolar transistors; Integrated optoelectronics; Light emitting diodes

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED RADIATION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMITTERS;

ALUMINUM GALLIUM ARSENIDE; DC CURRENT GAIN;

INTEGRATED OPTOELECTRONICS;

EID: 3242839539     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961195     Document Type: Article

References (4)

1. WADA, O., YAMAKOSHI, S., ABE, M., NISHITANI, Y., and SAKURAI, T.: 'High radiance In-GaAsP/InP lensed LEDs for optical communication systems at 1.2-1.3μm'. IEEE J. Quantum Electron., 1981, QE-17, (2), pp. 174-178
2. GYU-SE CHO, and YOLING-SE KWON: 'AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern', SPIE Opt. Comp. Technol., 1993, 1813, pp. 142-153
3. GYU-SE CHO, SUNG-HO HAM, and YOUNG-SE KWON: 'Meltback etching and regrowth of GaAs/AlGaAs in liquid phase epitaxy for fabrication of microlens', J. Electron. Mater., 1993, 22, (4). pp. 353-359
4. YANG, O.S., HONG, S.C., and KWON, Y.S.: 'Surface-emitting microlensed LED and its self-focusing effect'. CLEO '96 Tech. Dig., 1996, pp. 460-461