Surface Acoustic Wave Techniques for the Real-Surfaces Investigations of InP (111), InAs (111) Semiconductors

Acustica

Volumn 83, Issue 3, 1997, Pages 482-488

  Pustelny, T ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ETCHING; GRINDING (MACHINING); POLISHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE TREATMENT; SURFACE WAVES;

INDIUM ARSENIDE; SURFACE ACOUSTIC WAVE TECHNIQUES; TRANSVERSE ACOUSTOELECTRIC VOLTAGE METHOD;

ACOUSTIC VARIABLES MEASUREMENT;

EID: 3242835200     PISSN: 00017884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (32)

1. B. Davari: Semiconductor surface characterization using transverse acoustoelectric voltage versus voltage measurements. J. Appl. Phys. 1 (1983) 54-56.
2. A. Opilski: The influence of surface states on the propagation of ultra- and hypersonic surface waves in semiconductor. Zeszyty Naukowe Politechniki Sl., Mat-Fiz. 17 (1976) (in polish).
3. I. Yakovkin, V. Vyun: Using of acoustoelectric interaction in studies of semiconductor surface. Proc. Intern. Symp. "Surface Waves in Solid and Layered Structures", Novosibirsk, 1986. 183-200.
4. R. T. Talasek, A. J. Syllonios: Solid-state science and technology. North Holland, Amsterdam, 1986.
5. C. E. Reed, C. Scoh: Surface physics of phosphors and semi-conductors. Academic Press, London, 1987.
6. M. Tabib-Azir: Acoustoelectric measurement of minority and majority carriers mobilities in semiconductor. Appl. Phys. A 45 (1988) 119-124.
7. T. Pustelny: Surface potential investigations of indium phosphate real surface by means of transverse acoustoelectric method. Acta Physica Polonica 88 (1995) 413-422.
8. J. H. Gilboa, M. Motamedi, P. Das: Semiconductor surface study by transverse acoustoelectric voltage using surface acoustoelectric voltage. Proc. 1986 IEEE Ultrasonic Symp., 1986. 663-667.
9. T. Pustelny, B. Adamowicz: Transverse acoustoelectric effect and surface photovoltage method in surface study of GaP and Inp. J. Tech. Phys. 3 (1994) 201-208.
10. A. Opilski, T. Pustelny: The new acoustic method of determination of the fast surface states parameters in semicondctor. Archives of Acoustics 10(2) (1985) 139-150.
11. T. Pustelny, A. Opilski: Investigations concerning fast surface states of semiconductors by means of acoustic methods. Archives of Acoustics 14(3) (1989) 253-260.
12. R. Adler, S. Datta: Acoustoelectric mobility measurements on films with negligible acoustic loss. IEEE SU 10 (1988) 139-144.
13. Z. Kubik: An acoustic method of calculating surface potential in a semiconductor. Acta Phys. Slov. 37(6) (1987) 359-368.
14. Z. Kubik. Dissertation. Gdansk University, Poland, 1984.
15. T. Pustelny, B. Adamowicz: Determination of some electronic and optical parameters of GaP surfaces by means of acoustoelectric and photoelectric methods. J. Tech. Physics 34(3) (1993) 299-309.
16. T. Pustelny: Transverse acoustoelectric methods for the surface investigation of III-V semiconductor group. Molecular and Quantum Acoustic 7 (1986) 102-110.
17. Z. Kubik: Acoustic method of calculating the surface potential in semiconductor. Acoustic Letters 8 (1984) 20.
18. T Pustelny Surface potential investigation in IaP using acoustoelectric effect. Zeszyty Naukowe Pol. Sl, MAT-FIZ 60 (1989) 143-147. (in polish).
19. T. Pustelny, Z. Kubik: Acoustic methods of the determination of surface potential in GaAs. Molecular and Quantum Acoustic 14 (1993) 112-120.
20. T. Pustelny, K. Z.: Investigation of surface potential of GaAs surface by means of acoustics effects. Archives Acoustics 19(2) (1994) 271-280.
21. S. M. Sze: Physics of semiconductor devices. Wiley, New York, 1989.
22. T. Pustelny: Investigation of surface potential of real GaP surface by means of transverse acoustoelectric method. Proc. 13 ICA, Belgrade. 1989. Vol. 4, 361-364.
23. T. Pustelny, A. Opilski: Investigation of the fast surface states on Si (111) surface by means of new acoustic method. Acta Universitatis Wratisl. 937 (1986) 161-168.
24. A. Opilski, M. Urbanczyk: Measurement of free-carrier distributions by means of condestructive saw-tav spectroscopy. Phys. Stat. Sol. A 103 (1987) 637-642.
25. M. Tabib-Azar: Characterization of electrical properties of semi-insulating GaAs using acousto-electric voltage spectroscopy. Solid-State Electronics 31(7) (1988) 1197-1204.
26. T. Pustelny, A. Opilski: Investigations of GaP by means of transverse acoustoelectric effect. Molecular and Quantum Acoustics 9 (1988) 75-81.
27. T. Pustelny: Semiconductor surface investigations by means of acoustic method in high frequency range. Molecular and Quantum Acoustics (in press).
28. P. Das, M. Tabib-Azir: Acoustoelectric effects in superlattices using a separate medium structure. Appl. Phys. Lett. 51(6) (1987) 436-438.
29. M. S. El-Dessouki, V. Attia, M. M. El-Deen.Saad, F. Gobrial: Surface photovoltage spectroscopy of real (111) GaP surfaces. Phys. Stat. Sol. (A) 99 (1987) 171.
30. T. Pustelny: Investigation of the electrical surface potential in semiconductors by using acoustic method. Molecular and Quantum Acoustics 8 (1987) 47-53.
31. I. Wojas: Semiconductor surface physics. Academic Press, Warszawa, 1995.
32. T. Pustelny: Luminescence fiber optic sensors. Opto-Electranics Review 4 (1993) 121-124.