HgCdTe photodiodes versus quantum well infrared photoconductors for long wavelength focal plane arrays

Opto-Electronics Review

Volumn 1998, Issue 4, 1998, Pages 279-294

  Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

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EID: 3242803471     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (36)

1. M.A. Kinch and A. Yariv, "Performance limitations of GaAs/AlGaAs infrared superlattices," Appl. Phys. Lett. 55, 2093-2095 (1989).
2. A. Rogalski, "Comparison of the performance of quantum well and conventional bulk infrared photodetectors," Infrared Phys. Technol. 38, 295-310 (1997).
3. th Annual AIAA/BMDO Technology Readiness Conference and Exhibit, August 18-22, 1997, San Diego, CA.
4. P.R. Norton, "Status of infrared detectors," Proc. SPIE 3379, 102-114 (1998).
5. B.F. Levine, "Quantum well infrared photodetectors," J. Appl. Phys. 74, R1-R81 (1993).
6. S.D. Gunapala and K.M.S.V. Bandara, "Recent developments in quantum-well infrared photodetectors," in Thin Films, Vol. 21, pp. 113-237, edited by M.H. Francombe and J.L. Vossen, Academic Press, New York, 1995.
7. M.Z. Tidrow, "Simplified quantum well infrared photodetectors," Proc. SPIE 2999, 109-117 (1996).
8. +-on-p versus p-on-n structures," J. Appl. Phys. 77, 3505-3512 (1995).
9. +-on-p HgCdTe photodiodes," J. Appl. Phys. 80, 2483-2489 (1996).
10. M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mroczkowski, and E.E. Krueger, "The impact of characterization techniques on HgCdTe infrared detector technology," Semicond. Sci. Technol. 8, 788-804 (1993).
11. J. Bajaj, J.M. Arias, M. Zandian, J.G. Pasko, L.J. Kozlowski, R.E. De Wames, and W.E Tennant, "Molecular beam epitaxial HgCdTe material characteristics and device performance: Reproducibility status," J. Electron. Mater. 24, 1067-1076 (1995).
12. 1-xAs quantum well infrared photodetector hand-held camera," IEEE Trans. Electron Devices 44, 51-57 (1997).
13. M.Z. Tidrow, J.C. Chiang, S.S Li, and K. Bacher, "A high strain two-stack two-color quantum well infrared photodetector," Appl. Phys. Lett. 70, 859-861 (1997).
14. A. Singh and M. O. Manasreh, "Quantum well and superlattice heterostructures for space-based long wavelength infrared photodetectors," Proc. SPIE 2397, 193-209 (1995).
15. L.J. Kozlowski, K. Vural, J.M. Arias, W.E. Tennant, and R.E. DeWames, "Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays," Proc. SPIE 3182, 2-13 (1997).
16. J. Piotrowski and W. Gawron, "Ultimate performance of infrared photodetectors and figure of merit of detector material," Infrared Phys. Technol. 38, 63-68 (1997).
17. K.K. Choi, C.Y. Lee, M.Z. Tidrow, W.H. Chang, and S.D. Gunapala, "Performance assessment of quantum well infrared photodetectors," Appl. Phys. Lett. 65, 1703-1705 (1994).
18. J.D. Benson, J.H. Dinan, J. Waterman, C.J. Summers, R.D. Benz, B.K. Wagner, S.D. Pearson, A. Parikh, J.J. Jensen, O.K. Wu, R.D. Rajavel, G.S. Kamath, K.A. Harris, S.R. Jost, J.M. Arias, L.J. Kozlowski, M. Zandian, J. Bajaj, K. Vural, R.E. DeWames, C.A. Cockrum, G.M. Venzor, S.M. Johnson, H.D. Shih, M.J. Bevan, J.A. Dodge, and A. Simmons, "MBE flexible manufacturing for HgCdTe focal plane arrays," Proc. SPIE 2744, 126-132 (1996).
19. O.K. Wu, T.J. DeLyon, R.D. Rajavel, and J.E. Jensen, "Molecular beam epitaxy," in Narrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, pp. 97-130, edited by P. Capper, Chapman & Hall, London, 1997.
20. T.J. DeLyon, M.D. Gorwitz, J.E. Jensen, C.A. Cockrum, S.M. Johnson, and G.M. Venzor, "MBE growth of HgCdTe IR detectors on silicon substrates," presented during The 1998 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Charleston, October 20-22, 1998.
21. R.D. Rajavel, D.M. Jamba, J.E. Jensen, O.K. Wu, P.D. Brewer, J.A. Wilson, J.L. Johnson, E.A. Patten, K. Kosai, J.Y. Caulfield, and P.M. Goetz, "Molecular beam epitaxial grown and performance of HgCdTe-based simultaneous-mode two-color detectors," J. Electron. Mater. 27, 747-751 (1998).
22. W. A. Beck and T. S. Faska, "Current status of quantum well focal plane arrays," Proc. SPIE 2744, 193-206 (1996).
23. S.D. Gunapala, S.V. Bandara, J.K. Liu, W. Hong, E.M. Luong, J.M. Mumolo, M.J. McKelvey, D.K. Sengupta, A. Singh, C.A. Shott, R. Carralejo, P.D. Maker, J.J. Bock, M.E. Ressler, M.W. Werner, and T.N. Krabach, "Quantum well infrared photodetector research and development at Jet Propulsion Laboratory," Proc. SPIE 3379, 382-395 (1998).
24. 1-xAs quantum well infrared photodetector focal plane array camera," IEEE Trans. Electron Devices 44, 45-50 (1997).
25. R.L. Whitney, K.F. Cuff, and F.W. Adams, "Long-wavelength infrared photodetectors based on intersubband transitions in III-V semiconductor quantum wells," in Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors, pp. 55-108, Artech House, Boston, 1993.
26. A. Singh and D.A. Cardimona, "Design issues relating to low temperature dark current in quantum well infrared photodetectors," Proc. SPIE 2999, 46-54 (1997).
27. L.J. Kozlowski, S.A. Cabelli, D.E. Cooper, and K. Vural, "Low background infrared hybrid focal plane array characterization," Proc. SPIE 1946, 199-213 (1993).
28. L.J. Kozlowski, R.B. Balley, S.E. Cooper, I.S. Gergis, A.C. Chen, W.V. McLevige, G.L. Bostrup, K. Vural, W.E. Tennant, and P.E. Howard, "High-performance 5-μm 640 × 480 HgCdTe-on-sapphire focal plane arrays," Opt. Eng. 33, 54-63 (1994).
29. L.J. Kozlowski, "HgCdTe focal plane arrays for high performance infrared cameras," Proc. SPIE 3179, 200-211 (1997).
30. R.D. Rajavel, D.M. Jamba, O.K. Wu, J.E. Jensen, J.A. Wilson, E.A. Patten, K. Kosai, P. Goetz, G.R. Chapman, and W.A. Radford, "High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy," J. Crystal Growth 175, 653-658 (1997).
31. R.D. Rajavel, D.M. Jamba, J.E. Jensen, O.K. Wu, P.D. Brewer, J.A. Wilson, J.L. Johnson, E.A. Patten, K. Kasai, J.T. Caulfield, and P.M. Goetz, "Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors," J. Electron. Mater. 27, 747-751 (1998).
32. P. Mitra, S.L. Barnes, F.C. Case, M.B. Reine, P. O'Dette, R. Starr, A. Hairston, K. Kuhler, M.H. Weiler, and B.L. Musicant, "MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays," J. Electron. Mater. 26, 482-487 (1997).
33. M.Z. Tidrow, K.K. Choi, A.J. DeAnni, W.H. Chang, and S.P. Svensson, "Grating coupled multicolor quantum well infrared photodetectors," Appl. Phys. Lett. 67, 1800-1802 (1995).
34. J.C. Chiang, S.S. Li, M.Z. Tidrow, P. Ho, M. Tsai, and C.P. Lee, "A voltage-tunable multicolor triple-coupled InGaAs/GaAs/AlGaAs quantum-well infrared photodetector for 8-12 μm detection," Appl. Phys. Lett. 69, 2412-2414 (1996).
35. S.D. Gunapala, S.V. Bandara, A. Singh, J.K. Liu, E.M. Luong, J.M. Mumolo, and M.J. McKelvey, "Quantum well infrared photodetectors for low background applications," Proc. SPIE 3379, 225-234 (1998).
36. F. Bertrand, J.T. Tissot, and G. Destefanis, "Second generation cooled infrared detectors. State of the art and prospects," in Physics of Semiconductor Devices, Vol. II, pp. 713-720, edited by V. Kumar and S.K. Agarwal, Narosa Publishing House, New Delhi, 1998.