0.7 Analogue structures and exchange interactions in quantum wires

Solid State Communications

Volumn 131, Issue 9-10 SPEC. ISS., 2004, Pages 591-597

  Graham, A C ^a   Thomas, K J ^a   Pepper, M ^a   Simmons, M Y ^a,c   Ritchie, D A ^a   Berggren, K F ^b   Jaksch, P ^b   Debnarova, A ^b   Yakimenko, I I ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

A. Nanostructures; A. Semiconductors; B. Electron electron interactions; B. Electronic transport

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS;

ELECTRON-ELECTRON TRANSPORT; ELECTRONIC TRANSPORT; LOCAL SPIN DENSITY FUNCTIONALS (LSD); NANOSTRUCTURES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 3242752808     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.05.048     Document Type: Article

References (32)

1. Thomas K.J., Nicholls J.T., Simmons M.Y., Pepper M., Mace D.A., Ritchie D.A. Phys. Rev. Lett. 77:1996;135.
2. Thomas K.J., Nicholls J.T., Pepper N.J.A.M., Simmons M., Mace D.R., Tribe W.R., Ritchie D.A. Phys. Rev. B. 58:1998;4846.
3. Kristensen A., Lindelof P.E., Jensen J.B., Zaffalon M., Hollingbery J., Pedersen S.W., Nygård J., Bruus H., Reimann S.M., Sörenson C.B., et al. Physica B. 251:1998;180.
4. Kristensen A., Bruus H., Hansen A.E., Jensen J.B., Lindelof P.E., Marckmann C.J., Nygård J., Sörenson C.B., Beuscher F., Forchel A., et al. Phys. Rev. B. 62:2000;10950.
5. Kristensen A., Bruus H. Physica Scripta. 101:2002;151.
6. Cronenwett S.M., Lynch H.J., Goldhaber-Gordon D., Kouwenhoven L., Marcus C.M., Hirose K., Wingreen N.S., Umansky V. Phys. Rev. Lett. 88:2002;226805.
7. Ramvall P., Carlsson N., Maximov I., Omling P., Samuelson L., Seifert W., Wang Q. Appl. Phys. Lett. 71:1997;918.
8. Reilly D.J., Facer G.R., Dzurak A.S., Kane B.E., Clark R.G., Stiles P.J., Clark R.G., Hamilton A.R., O'Brien J.L., Lumpkin N.E., et al. Phys. Rev. B. 63:2001;121311.
9. Bagraev N.T., Buravlev A.D., Klyachkin L.E., Gehlhoff A.M.M.W., Ivanov V.K., Shelykh I.A. Semiconductors. 36:2002;439.
10. Starikov A., Yakimenko I.I., Berggren K.-F. Phys. Rev. B. 67:2003;235319.
11. Wang C.-K., Berggren K.-F. Phys. Rev. B. 54:1996;14257.
12. Wang C.-K., Berggren K.-F. Phys. Rev. B. 57:1998;4552.
13. Bychkov A.M., Yakimenko I.I., Berggren K.-F. Nanotechnology. 11:2000;318.
14. Tokura Y., Tarucha S. Phys. Rev. B. 50:1994;10981.
15. Hirose K., Li S.-S., Wingreen N.S. Phys. Rev. B. 63:2001;033315.
16. Spivak B., Zhou F. Phys. Rev. B. 61:2000;16730.
17. Sushkov O.P. Phys. Rev. B. 67:2003;195318.
18. Flambaum V.V., Kuchiev M.Y. Phys. Rev. B. 61:2000;7869.
19. Rejec T., Ramsak A., Jefferson J.H. Phys. Rev. B. 62:2000;12985.
20. Seelig G., Matveev K.A. Phys. Rev. Lett. 90:2003;176804.
21. Meir Y., Hirose K., Wingreen N.S. Phys. Rev. Lett. 89:2002;196802.
22. Bruus H., Cheianov V.V., Flensberg K. Physica E. 10:2001;97.
23. P. Cornaglia, C. Balseiro, cond-mat/030168, 2003.
24. Fitzgerald R. Phys. Today. 55:2002;21.
25. Minkel J. Phys. Rev. Focus. 10:2002;24.
26. Graham A.C., Thomas K.J., Pepper M., Cooper N.R., Simmons M.Y., Ritchie D.A. Phys. Rev. Lett. 91:2003;136404.
27. A.C. Graham, K.J. Thomas, M. Pepper, M.Y. Simmons, D.A. Ritchie, Physica E 22 (2004) 264.
28. Koch S., Haug R.J., Klitzing K., Razeghi M. Phys. Rev. Lett. 72:1994;2450.
29. Daneshvar A.J., Ford C.J.B., Simmons M.Y., Khaetskii A.V., Hamilton A.R., Pepper M., Ritchie D.A. Phys. Rev. Lett. 79:1997;4449.
30. Giuliani G.F., Quinn J.J. Phys. Rev. B. 31:1985;6228.
31. Yarlagadda S. Phys. Rev. B. 44:1991;13101.
32. Such behaviour has been observed in three of our samples. Results so far indicate that the exact structure of the crossing is very sensitive to confinement potential.