Physically based 2D compact model for power bipolar devices

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 17, Issue 4, 2004, Pages 397-405

  Igic, P M ^a   Towers, M S ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Ambipolar equation; Bipolar power device; Compact model; IEGT; IGBT; Modelling

Indexed keywords

DIFFUSION; MATHEMATICAL MODELS; MOS CAPACITORS; SIMULATORS; SWITCHING CIRCUITS; THYRISTORS;

AMBIPOLAR EQUATION; BIPOLAR POWER DEVICES; COMPACT MODEL; IEGT;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 3242733690     PISSN: 08943370     EISSN: None     Source Type: Journal    
DOI: 10.1002/jnm.535     Document Type: Article

References (5)

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