Stark effect in semiconductor quantum dots

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1115-1119

  Pokutnyi, S I ^a   Jacak, L ^b   Misiewicz, J ^b   Salejda, W ^b   Zegrya, G G ^c  

^a ODESSA NATIONAL UNIVERSITY   (Ukraine)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; ELECTRON ABSORPTION; ELECTROOPTICAL EFFECTS; EXCITONS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS;

INTERATOMIC DISTANCES; QUANTUM CONFINEMENT EFFECTS; QUANTUM NUMBERS; STARK EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3242716162     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759791     Document Type: Article

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