Tungsten pedestal structure for nanotriode devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1298-1302

  Blackburn, A M ^a   Hasko, D G ^a   Ahmed, H ^a   Williams, D A ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON EMISSION; ELECTRONIC EQUIPMENT; NANOSTRUCTURED MATERIALS; TUNGSTEN; VACUUM;

FIELD EMISSIONS; NANOTRIODE DEVICES; NANOTRIODES; PEDESTAL STRUCTURES;

TRIODES;

EID: 3242687106     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1722182     Document Type: Conference Paper

References (7)

1. T. Utsumi, in Vacuum Microelectronics, edited by W. Zhu (Wiley, New York, 2001).
2. A. A. G. Driskill-Smith, P. G. Hasko, and H. Ahmed, Appl. Phys. Lett. 75, 2845 (1999).
3. A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, Appl. Phys. Lett. 71, 3159 (1997).
4. W. Chen and H. Ahmed, J. Vac. Sci. Technol. B 11, 2519 (1993).
5. W. Chen, H. Ahmed, and K. Nakazato, Appl. Phys. Lett. 66, 3383 (1996).
6. R. H. Good and E. W. Muller, in Handbuch der Physik, edited by S. Flugge (Springer, Berlin, 1956), Vol. XXI, p. 176.
7. A. C. F. Hoole, D. F. Moore, and A. N. Broers, J. Vac. Sci. Technol. B 11, 2574 (1993).