Memory effect of diamond in-plane-gated field-effect transistors

Applied Physics Letters

Volumn 85, Issue 1, 2004, Pages 139-141

  Sumikawa, Yu ^c   Banno, Tokishige ^c   Kobayashi, Kensaku ^c   Itoh, Yutaka ^a   Umezawa, Hitoshi ^a   Kawarada, Hiroshi ^b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; DIAMONDS; ELECTRIC INSULATORS; ELECTRON TRAPS; HYSTERESIS; IRRADIATION; LIGHTING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE;

DRAIN CURRENT; GATE VOLTAGE; PINNING; RADIANT FLUX;

FIELD EFFECT TRANSISTORS;

EID: 3242686307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767272     Document Type: Article

References (8)

1. H. Fujii, S. Kanemaru, T. Matsukawa, and J. Itoh, Appl. Phys. Lett. 75, 3986 (1999).
2. T. Matsukawa, S. Kanemaru, M. Masahara, M. Nagao, H. Tanoue, and J. Itoh, J. Acoust. Soc. Jpn. 42, 2422 (2003).
3. B. Cui, R. Sordan, M. Burghard, and K. Kern, Appl. Phys. Lett. 81, 3260 (2002).
4. T. Banno, M. Tachiki, H. Seo, H. Umezawa, and H. Kawarada, Diamond Relat. Mater. 11, 387 (2002).
5. M. Tachiki, H. Seo, T. Banno, Y. Sumikawa, H. Umezawa, and H. Kawarada, Appl. Phys. Lett. 81, 2854 (2002).
6. J. A. Garrido, C. E. Nebel, R. Todt, G. Rosel, M.-C. Amann, and M. Stutzmann, Appl. Phys. Lett. 82, 988 (2003).
7. Y. Yun, T. Maki, and T. Kobayashi, J. Appl. Phys. 82, 3422 (1997).
8. M. Tachiki, Y. Kaibara.Y. Sumikawa, M. Shiaeno, H. Kanazawa, T. Banno, K. S. Song, H. Umezawa, and H. Kawarada, Surf. Sci. (in press).