Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 271-275

  Worschech, Lukas ^a   Schliemann, Andreas ^a   Hsin, Heart ^a   Forchel, Alfred ^a   Curatola, Gilberto ^b   Iannaccone, Giuseppe ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF PISA   (Italy)

Author keywords

2DEG; Ballistic transport; Heterostructure field effect transistor

Indexed keywords

BALLISTICS; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; NANOSTRUCTURED MATERIALS;

2DEG; BALLISTIC TRANSPORT; GATE VOLTAGE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 3242675993     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.019     Document Type: Conference Paper

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