Thin-beam crystallization method for fabrication of LTPS

Digest of Technical Papers - SID International Symposium

Volumn 36, Issue 1, 2005, Pages 503-505

  Knowles, David S ^a   Park, Ji Yong ^a   Im, Chaiin ^a   Das, Palash ^a   Hoffman, Thomas ^a   Burfeindt, Bernd ^b   Muenz, Holger ^b   Herkommer, Alois ^b   Van Der Wilt, Paul C ^c   Limanov, Alex B ^c   Im, James S ^c  

^a CYMER INC   (United States)

^b CARL ZEISS SMT AG   (Germany)

^c Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; COSTS; ELECTRON MOBILITY; THIN FILMS; TRANSISTORS;

HIGHER ELECTRON MOBILITY; LASER ANNEALING PROCESS; NARROW LASER BEAM; TEMPERATURE POLY CRYSTALLINE SILICON (LTPS);

CRYSTALLIZATION;

EID: 32144440997     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2036484     Document Type: Conference Paper

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