Influence of activation annealing and silicidation process on as redistribution and pile-up at the Ni xSi y/SiO 2 interface

Proceedings - Electrochemical Society

Volumn PV 2005-05, Issue , 2005, Pages 241-248

  Pawlak, M A ^a,c   Kittl, J A ^b   Janssens, T ^c   Lauwers, A ^d   Vandervorst, W ^c   Anil, K G ^c   Schram, T ^c   Veloso, A ^c   Van Dal, M J H ^d   Maex, K ^c   Vantomme, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

^c IMEC   (Belgium)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANNEALING; SILICIDATION PROCESS;

ARSENIC; IMPURITIES; POLYSILICON; SEMICONDUCTOR DOPING; SILICA;

ANNEALING;

EID: 31844451785     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. W. Maszara et al., IEDM Tech. Dig, (2002) 367-370.
2. M. A. Pawlak, J. A. Kittl, O. Chamirian, A. Veloso, A. Lauwers, T. Schram, K. Maex, A Vantomme, Microelectrical Engineering, 76, (2004) 349-353.
3. J. Kedzierski, D. Boyd, P. Ronsheim, S. Zafar, J. Newbury, J. Ott, C. Cabral Jr., M. Ieong, W. Haensch, IEDM Tech. Dig, (2003) 315-318.