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Volumn 44, Issue 46-49, 2005, Pages
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Influence of anisotropic diffusion of Ga atoms on GaAs growth on alternately inverted (100) substrates
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Author keywords
Activation energy; Diffusion length; Gallium arsenide; Molecular beam epitaxy; Nonlinear optics; Quasi phase matching; Surface diffusion
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Indexed keywords
ACTIVATION ENERGY;
ANISOTROPY;
ATOMS;
DIFFUSION IN SOLIDS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SURFACE PHENOMENA;
TEMPERATURE DISTRIBUTION;
DIFFUSION LENGTH;
GALLIUM ARSENIDE;
QUASI PHASE MATCHING;
SURFACE DIFFUSION;
GALLIUM;
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EID: 31844451323
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.44.L1397 Document Type: Article |
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Times cited : (24)
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References (11)
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