On the location and magnitude of trapped charge in poly- Si ALD-Al 2O3 capped Hf-silicate gate stacks

Proceedings - Electrochemical Society

Volumn PV 2005-05, Issue , 2005, Pages 118-124

  Maitra, Kingsuk ^a   Linder, Barry P ^b   Gusev, Evgeni P ^b   Narayanan, Vijay ^b   Frank, Martin M ^b   Cartier, Eduard A ^b  

^a North Carolina State University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; MATHEMATICAL MODELS; MULTILAYERS; SILICATES;

HF-SILICATE (HFSIO); INJECTED CHARGE;

POLYSILICON;

EID: 31844447991     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. V Fischetti, J. Appl. Phys., 57, (1985), 2860
2. A. Kerber, PhD Dissertation, IMEC, Leuven, (2003)
3. E. Cartier et. al., VLSI Tech. Dig., (2004), 44
4. C. Hobbs, VLSI Tech. Dig., (2003), 9
5. ITRS, (2004) updated edition, http://public.itrs.net