Theory and experimental validation of a new analytical model for the position-dependent Hall voltage in devices with arbitrary aspect ratio

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 314-322

  Rudan, Massimo ^a   Reggiani, Susanna ^a   Gnani, Elena ^a   Baccarani, Giorgio ^a   Corvasce, Chiara ^b   Barlini, David ^b   Ciappa, Mauro ^b   Fichtner, Wolfgang ^b   Denison, Marie ^c   Jensen, Nils ^c   Groos, Gerhard ^d   Stecher, Matthias ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b ETH ZURICH   (Switzerland)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Device modeling; Hall mobility; Hall voltage measurements

Indexed keywords

ASPECT RATIO; CARRIER MOBILITY; ELECTRIC POTENTIAL; HALL EFFECT; HIGH TEMPERATURE EFFECTS; VOLTAGE MEASUREMENT;

ARBITRARY ASPECT RATIO; DEVICE MODELING; HALL MOBILITY; HALL VOLTAGE MEASUREMENTS;

SEMICONDUCTOR DEVICE MODELS;

EID: 31744446718     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862510     Document Type: Article

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