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Volumn 23, Issue 2, 2006, Pages 426-427
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Metallization of Cu3N semiconductor under high pressure
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Author keywords
[No Author keywords available]
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Indexed keywords
ENERGY GAP;
HIGH PRESSURE ENGINEERING;
HYDROSTATIC PRESSURE;
NITROGEN COMPOUNDS;
A: SEMICONDUCTORS;
AMBIENT PRESSURES;
AMBIENTS;
DIAMOND-ANVIL CELL;
ELECTRICAL CONDUCTIVITY;
FOUR-PROBE METHODS;
HIGH PRESSURE;
METALLISATION;
ORDERS OF MAGNITUDE;
QUASIHYDROSTATIC PRESSURE;
COPPER COMPOUNDS;
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EID: 31744441956
PISSN: 0256307X
EISSN: 17413540
Source Type: Journal
DOI: 10.1088/0256-307X/23/2/042 Document Type: Article |
Times cited : (12)
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References (8)
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