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Volumn 23, Issue 2, 2006, Pages 426-427

Metallization of Cu3N semiconductor under high pressure

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HIGH PRESSURE ENGINEERING; HYDROSTATIC PRESSURE; NITROGEN COMPOUNDS;

EID: 31744441956     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/2/042     Document Type: Article
Times cited : (12)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.