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International Journal of Electronics

Volumn 92, Issue 9, 2005, Pages 539-552

Impact of interface traps on gate-induced drain leakage current in n-type metal oxide semiconductor field effect transistor

(2) Touhami, A a Bouhdada, A a

a HASSAN II UNIVERSITY (Morocco)

Author keywords

Band to band tunnelling; Band trap band; GIDL; Interface traps; Leakage current; MOSFET

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; HOT CARRIERS; INTEGRATED CIRCUITS; MOSFET DEVICES;

BAND TO BAND TUNNELING; BAND TRAP BAND; GIDL;

LEAKAGE CURRENTS;

EID: 31744432455 PISSN: 00207217 EISSN: 13623060 Source Type: Journal
DOI: 10.1080/00207210500092677 Document Type: Article

Times cited : (6)

References (63)

1
- 0024125256
- M.G. Ancona, N.S. Saks and D. McCarthy, IEEE Trans. Elec. Dev., 35, p. 2221, 1988.
- (1988) IEEE Trans. Elec. Dev. , vol.35 , pp. 2221
- Ancona, M.G.¹ Saks, N.S.² McCarthy, D.³

2
- 0002605770
- S. Banerjee, J. Colman, B. Richardson and A. Shah, in Proc. VLSI Symp., 1987, p. 97.
- (1987) Proc. VLSI Symp. , pp. 97
- Banerjee, S.¹ Colman, J.² Richardson, B.³ Shah, A.⁴

3
- 0032210088
- A. Bouhdada, A. Touhami and S. Bakkali, Microeletron. J., 29, p. 813, 1998.
- (1998) Microeletron. J. , vol.29 , pp. 813
- Bouhdada, A.¹ Touhami, A.² Bakkali, S.³

4
- 0031126236
- A. Bouhdada, S. Bakkali and A. Touhami, Microeletron. Reliab., 37, p. 649, 1997.
- (1997) Microeletron. Reliab. , vol.37 , pp. 649
- Bouhdada, A.¹ Bakkali, S.² Touhami, A.³

5
- 0033889077
- J. Cai and C.T. Sah, IEEE Trans. Elec. Dev., 47, p. 576, 2000.
- (2000) IEEE Trans. Elec. Dev. , vol.47 , pp. 576
- Cai, J.¹ Sah, C.T.²

6
- 0023542548
- T.Y. Chan, J. Chen, P.K. Ko and C. Hu, Int. Elec. Dev. Meet. Tech. Dig., p. 718, 1987.
- (1987) Int. Elec. Dev. Meet. Tech. Dig. , pp. 718
- Chan, T.Y.¹ Chen, J.² Ko, P.K.³ Hu, C.⁴

7
- 0023553867
- C. Chang and J. Lien, Int. Elec. Dev. Meet. Tech. Dig., p. 714, 1987.
- (1987) Int. Elec. Dev. Meet. Tech. Dig. , pp. 714
- Chang, C.¹ Lien, J.²

8
- 0036655546
- S.I. Chang, J. Lee and H. Shin, Jpn. J. Appl. Phys., 41, p. 4432, 2002.
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 4432
- Chang, S.I.¹ Lee, J.² Shin, H.³

9
- 0032000289
- C. Chen and T.P. Ma, IEEE Trans. Elec. Dev., 45, p. 512, 1998.
- (1998) IEEE Trans. Elec. Dev. , vol.45 , pp. 512
- Chen, C.¹ Ma, T.P.²

10
- 0027147283
- W. Chen, A. Balasinski and T.P. Ma, IEEE Trans. Elec. Dev., 40, p. 187, 1993.
- (1993) IEEE Trans. Elec. Dev. , vol.40 , pp. 187
- Chen, W.¹ Balasinski, A.² Ma, T.P.³

11
- 0028427762
- M.J. Chen, K.C. Chao and C.H. Chen, IEEE Elec. Dev., 41, p. 734, 1994.
- (1994) IEEE Elec. Dev. , vol.41 , pp. 734
- Chen, M.J.¹ Chao, K.C.² Chen, C.H.³

12
- 0035338463
- G. Chen, M.F. Li and X. Yu, IEEE Trans. Elec. Dev. Lett., 22, 233, 2001.
- (2001) IEEE Trans. Elec. Dev. Lett. , vol.22 , pp. 233
- Chen, G.¹ Li, M.F.² Yu, X.³

13
- 0023454470
- J. Chen, T.Y. Chan, I.C. Chen, P.K. Ko and C. Hu, IEEE Elec. Dev. Lett., 8, p. 515, 1987.
- (1987) IEEE Elec. Dev. Lett. , vol.8 , pp. 515
- Chen, J.¹ Chan, T.Y.² Chen, I.C.³ Ko, P.K.⁴ Hu, C.⁵

14
- 0031274351
- S.M. Cheng, C.M. Yih, J.C. Yeh, S.N. Kuo and S.S. Chung, IEEE Trans. Elec. Dev., 44, p. 1908, 1997.
- (1997) IEEE Trans. Elec. Dev. , vol.44 , pp. 1908
- Cheng, S.M.¹ Yih, C.M.² Yeh, J.C.³ Kuo, S.N.⁴ Chung, S.S.⁵

15
- 0039189812
- K. Cheng, J.P. Leburton, K. Hess and J.W. Lyding, Appl. Phys. Lett., 79, p. 863, 2001.
- (2001) Appl. Phys. Lett. , vol.79 , pp. 863
- Cheng, K.¹ Leburton, J.P.² Hess, K.³ Lyding, J.W.⁴

16
- 0035062288
- S.S. Chung, S.J. Chen, W.J. Yang, C.M. Yih and J.J. Yang, Jpn. J. Appl. Phys., 40, p. 69, 2001.
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 69
- Chung, S.S.¹ Chen, S.J.² Yang, W.J.³ Yih, C.M.⁴ Yang, J.J.⁵

17
- 0036564353
- F. Driussi, D. Esseni, L. Selmi and F. Piazza, IEEE Trans. Elec. Dev., 49, p. 787, 2002.
- (2002) IEEE Trans. Elec. Dev. , vol.49 , pp. 787
- Driussi, F.¹ Esseni, D.² Selmi, L.³ Piazza, F.⁴

18
- 0025207780
- T. Endoh, R. Shirota, M. Momodomi and F. Masnoka, IEEE Trans. Elec. Dev., 37, p. 290, 1990.
- (1990) IEEE Trans. Elec. Dev. , vol.37 , pp. 290
- Endoh, T.¹ Shirota, R.² Momodomi, M.³ Masnoka, F.⁴

19
- 0036475593
- D. Esseni, J.D. Bude and L. Selmi, IEEE Trans. Elec. Dev., 49, p. 254, 2002.
- (2002) IEEE Trans. Elec. Dev. , vol.49 , pp. 254
- Esseni, D.¹ Bude, J.D.² Selmi, L.³

20
- 0026121462
- C. Fiegna, F. Venturi, M. Melanotte, E. Sangiorgi and B. Ricco, IEEE Trans. Elec. Dev., 38, p. 603, 1991.
- (1991) IEEE Trans. Elec. Dev. , vol.38 , pp. 603
- Fiegna, C.¹ Venturi, F.² Melanotte, M.³ Sangiorgi, E.⁴ Ricco, B.⁵

21
- 0020125523
- H. Gesch, J.P. Leburton and G.E. Dorda, IEEE Trans. Elec. Dev., 29, p. 913, 1982.
- (1982) IEEE Trans. Elec. Dev. , vol.29 , pp. 913
- Gesch, H.¹ Leburton, J.P.² Dorda, G.E.³

22
- 0021201529
- G. Groeseneken, H.E. Maes, N. Beltran and R.F. Keersmaecker, IEEE Trans. Elec. Dev, 31, p. 42, 1984.
- (1984) IEEE Trans. Elec. Dev , vol.31 , pp. 42
- Groeseneken, G.¹ Maes, H.E.² Beltran, N.³ Keersmaecker, R.F.⁴

23
- 0032123067
- J.C. Guo, Y.C. Liu, M.H. Chou, M.T. Wang and F. Shone, IEEE Trans. Elec. Dev, 45, p. 1518, 1998.
- (1998) IEEE Trans. Elec. Dev , vol.45 , pp. 1518
- Guo, J.C.¹ Liu, Y.C.² Chou, M.H.³ Wang, M.T.⁴ Shone, F.⁵

24
- 0026122995
- W. Hänsch, C. Mazure, A. Lill and M.K. Olowski, IEEE Trans. Elec. Dev., 38, p. 512, 1991.
- (1991) IEEE Trans. Elec. Dev. , vol.38 , pp. 512
- Hänsch, W.¹ Mazure, C.² Lill, A.³ Olowski, M.K.⁴

25
- 0032121870
- K.M. Han and C.T. Sah, IEEE Trans. Elec. Dev., 45, p. 1624, 1998.
- (1998) IEEE Trans. Elec. Dev. , vol.45 , pp. 1624
- Han, K.M.¹ Sah, C.T.²

26
- 0033743212
- M. Hirose, M. Koh, W. Mizubayashi, H. Murakami, K. Shibahara and S. Miyazaki, Semicond. Sci. Teclmol., 15, p. 485, 2000.
- (2000) Semicond. Sci. Teclmol. , vol.15 , pp. 485
- Hirose, M.¹ Koh, M.² Mizubayashi, W.³ Murakami, H.⁴ Shibahara, K.⁵ Miyazaki, S.⁶

27
- 0025659257
- T. Hori, in Proc. VLSI Tech. Symp., p. 69, 1990.
- (1990) Proc. VLSI Tech. Symp. , pp. 69
- Hori, T.¹

28
- 84945713471
- C. Hu, S.C. Tam, T. Hsu, P. Kuo, T. Chan and K.W. Terrill, IEEE Trans. Elec. Dev, 32, p. 375, 1990.
- (1990) IEEE Trans. Elec. Dev , vol.32 , pp. 375
- Hu, C.¹ Tam, S.C.² Hsu, T.³ Kuo, P.⁴ Chan, T.⁵ Terrill, K.W.⁶

29
- 50549156338
- E.O. Kane, J. Phys. Chem. Solids, 12, p. 181, 1959.
- (1959) J. Phys. Chem. Solids , vol.12 , pp. 181
- Kane, E.O.¹

30
- 0035250093
- M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T. Mihara, K. Shibahara, S. Miyazaki and M. Hirose, IEEE Trans. Elec. Dev., 48, p. 259, 2001.
- (2001) IEEE Trans. Elec. Dev. , vol.48 , pp. 259
- Koh, M.¹ Mizubayashi, W.² Iwamoto, K.³ Murakami, H.⁴ Ono, T.⁵ Tsuno, M.⁶ Mihara, T.⁷ Shibahara, K.⁸ Miyazaki, S.⁹ Hirose, M.¹⁰

31
- 0035248925
- L. Larcher, A. Paccagnella and G. Ghidini, IEEE Trans. Elec. Dev., 48, p. 285, 2001.
- (2001) IEEE Trans. Elec. Dev. , vol.48 , pp. 285
- Larcher, L.¹ Paccagnella, A.² Ghidini, G.³

32
- 0029324631
- G.H. Lee, J.S. Su and S.S. Chung, Microelectron. Engg, 28, p. 365, 1995.
- (1995) Microelectron. Engg , vol.28 , pp. 365
- Lee, G.H.¹ Su, J.S.² Chung, S.S.³

33
- 0035271060
- H.M. Lee, C.J. Liu, C.W. Hsu, M.S. Liang, Y.C. King and C.H. Hsu, Jpn. J. Appl. Phys., 40, p. 1218, 2001.
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 1218
- Lee, H.M.¹ Liu, C.J.² Hsu, C.W.³ Liang, M.S.⁴ King, Y.C.⁵ Hsu, C.H.⁶

34
- 0036638187
- J. Lee, G. Bosman, K.R. Green and D. Ladwig, IEEE Trans. Elec. Dev., 49, p. 1232, 2002.
- (2002) IEEE Trans. Elec. Dev. , vol.49 , pp. 1232
- Lee, J.¹ Bosman, G.² Green, K.R.³ Ladwig, D.⁴

35
- 0026080340
- G.Q. Lo, A.B. Joshi and D.L. Kwong, IEEE Trans. Elec. Dev. Lett., 12, p. 5, 1991.
- (1991) IEEE Trans. Elec. Dev. Lett. , vol.12 , pp. 5
- Lo, G.Q.¹ Joshi, A.B.² Kwong, D.L.³

36
- 0033317211
- H.O. Müller and B.W. Alphenaar, Jpn. J. Appl. Phys., 38, p. L1525, 1999.
- (1999) Jpn. J. Appl. Phys. , vol.38
- Müller, H.O.¹ Alphenaar, B.W.²

37
- 0025489076
- J. Marchetaux, M. Bourcerie, A. Boudou and D. Vuillaume, IEEE Trans. Elec. Dev. Lett., 11, p. 406, 1990.
- (1990) IEEE Trans. Elec. Dev. Lett. , vol.11 , pp. 406
- Marchetaux, J.¹ Bourcerie, M.² Boudou, A.³ Vuillaume, D.⁴

38
- 4244018384
- B. Meinershagen, Int. Elec. Devs. Meet. Tech. Dig., p. 504, 1988.
- (1988) Int. Elec. Devs. Meet. Tech. Dig. , pp. 504
- Meinershagen, B.¹

39
- 0030212001
- H.S. Momose et al., IEEE Trans. Elec. Dev., 43, p. 1233, 1996.
- (1996) IEEE Trans. Elec. Dev. , vol.43 , pp. 1233
- Momose, H.S.¹

40
- 0029379026
- A. Neugroschel, C.T. Sah, K.M. Han, M.S. Carroll, T. Nishida, J.T. Kavalieros and Y. Liu, IEEE Trans. Elec. Dev., 42, p. 1657, 1995.
- (1995) IEEE Trans. Elec. Dev. , vol.42 , pp. 1657
- Neugroschel, A.¹ Sah, C.T.² Han, K.M.³ Carroll, M.S.⁴ Nishida, T.⁵ Kavalieros, J.T.⁶ Liu, Y.⁷

41
- 0029512440
- T. Ohnakado, K. Mitsunaga, M. Nunoshita, H. Onoda, K. Sakakibara, N. Tsuji, N. Ajika, M. Hatanaka and H. Migoshi, Int. Elec. Devs. Meet. Tech. Dig., p. 279, 1995.
- (1995) Int. Elec. Devs. Meet. Tech. Dig. , pp. 279
- Ohnakado, T.¹ Mitsunaga, K.² Nunoshita, M.³ Onoda, H.⁴ Sakakibara, K.⁵ Tsuji, N.⁶ Ajika, N.⁷ Hatanaka, M.⁸ Migoshi, H.⁹

42
- 31744440640
- J.Z. Peng, Q. Lin, P. Fang, M. Kwan, S. Longcor and J. Lien, in Proc. IEEE IRPS, p. 154, 1994.
- (1994) Proc. IEEE IRPS , pp. 154
- Peng, J.Z.¹ Lin, Q.² Fang, P.³ Kwan, M.⁴ Longcor, S.⁵ Lien, J.⁶

43
- 0033874101
- T. Pompl, H. Wurzer, M. Kerber and I. Eisele, Microeletron. Reliab., 40, p. 37, 2000.
- (2000) Microeletron. Reliab. , vol.40 , pp. 37
- Pompl, T.¹ Wurzer, H.² Kerber, M.³ Eisele, I.⁴

44
- 0002473279
- L. Risch, R. Maly, W. Berger and R. Kirchen, in Proc. Solid State Dev. Mater., 1988, p. 585.
- (1988) Proc. Solid State Dev. Mater. , pp. 585
- Risch, L.¹ Maly, R.² Berger, W.³ Kirchen, R.⁴

45
- 0031163704
- K. Sakakibara, N. Ajika, M. Hatanaka, H. Miyoshi and A. Yasuoka, IEEE Trans. Elec. Dev., 44, p. 986, 1997.
- (1997) IEEE Trans. Elec. Dev. , vol.44 , pp. 986
- Sakakibara, K.¹ Ajika, N.² Hatanaka, M.³ Miyoshi, H.⁴ Yasuoka, A.⁵

46
- 0024870705
- J.J. Shaw and K. Wu, Int. Elec. Devs. Meet. Tech. Dig., p. 83, 1989.
- (1989) Int. Elec. Devs. Meet. Tech. Dig. , pp. 83
- Shaw, J.J.¹ Wu, K.²

47
- 0003675250
- New York: Wiley
- S.M. Sze, Semiconductor Devs - Physics and Technology, New York: Wiley, 1985.
- (1985) Semiconductor Devs - Physics and Technology
- Sze, S.M.¹

48
- 0026169346
- M. Takayanagi and S. Iwabushi, IEEE Trans. Elec. Devs., 38, p. 1425, 1991.
- (1991) IEEE Trans. Elec. Devs. , vol.38 , pp. 1425
- Takayanagi, M.¹ Iwabushi, S.²

49
- 0021483045
- S. Tam, P.K. Kuo and C. Hu, IEEE Trans. Elec. Dev., 31, p. 1116, 1984.
- (1984) IEEE Trans. Elec. Dev. , vol.31 , pp. 1116
- Tam, S.¹ Kuo, P.K.² Hu, C.³

50
- 0033721768
- H. Tanaka, H. Shinohara, H. Uchida and J. Ida, Jpn. J. Appl. Phys, 39, p. 1992, 2000.
- (2000) Jpn. J. Appl. Phys , vol.39 , pp. 1992
- Tanaka, H.¹ Shinohara, H.² Uchida, H.³ Ida, J.⁴

51
- 3843052685
- G. Timp et al., Int. Elec. Devs. Meet. Tech. Dig., p. 930, 1997.
- (1997) Int. Elec. Devs. Meet. Tech. Dig. , pp. 930
- Timp, G.¹

52
- 0012093729
- A. Touhami and A. Bouhdada, J. Applied Phys., 89, p. 1880, 2001.
- (2001) J. Applied Phys. , vol.89 , pp. 1880
- Touhami, A.¹ Bouhdada, A.²

53
- 0036903794
- A. Touhami and A. Bouhdada, Semicond. Sci. Technol., 17, p. 1272, 2002.
- (2002) Semicond. Sci. Technol. , vol.17 , pp. 1272
- Touhami, A.¹ Bouhdada, A.²

54
- 0025445360
- Y. Toyoshima, H. Iwai, F. Matsuoka, H. Hayashida, K. Maeguchi and K. Kanzaki, IEEE Trans. Elec. Dev., 37, p. 1496, 1990.
- (1990) IEEE Trans. Elec. Dev. , vol.37 , pp. 1496
- Toyoshima, Y.¹ Iwai, H.² Matsuoka, F.³ Hayashida, H.⁴ Maeguchi, K.⁵ Kanzaki, K.⁶

55
- 31744435076
- S. Ueno, T. Kuroi, A. Teramoto, H. Umeda, T. Eimori and Y. Inoue, Jpn. J. Appl. Phys., 41, p. 2335, 2002.
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 2335
- Ueno, S.¹ Kuroi, T.² Teramoto, A.³ Umeda, H.⁴ Eimori, T.⁵ Inoue, Y.⁶

56
- 0028740282
- T. Wang, C. Huang, T.E. Chang, J.H. Chou and C.Y. Chang, IEEE Trans. Elec. Dev., 41, p. 2475, 1994.
- (1994) IEEE Trans. Elec. Dev. , vol.41 , pp. 2475
- Wang, T.¹ Huang, C.² Chang, T.E.³ Chou, J.H.⁴ Chang, C.Y.⁵

57
- 0032136660
- T. Wang, L.P. Chiang, N.K. Zous, T.E. Chang and C. Huang, IEEE Trans. Elec. Dev., 45, p. 1791, 1998.
- (1998) IEEE Trans. Elec. Dev. , vol.45 , pp. 1791
- Wang, T.¹ Chiang, L.P.² Zous, N.K.³ Chang, T.E.⁴ Huang, C.⁵

58
- 0015481573
- M.H. White and J.R. Cricchi, IEEE Trans. Elec. Dev., 19, p. 1280, 1979.
- (1979) IEEE Trans. Elec. Dev. , vol.19 , pp. 1280
- White, M.H.¹ Cricchi, J.R.²

59
- 0027816862
- S. Yamada, Y. Hiura, T. Yamane, K. Amemiya, Y. Ohshima and K. Yoshikawa, Int. Elec. Devs. Meet. Tech. Dig., p. 23, 1993.
- (1993) Int. Elec. Devs. Meet. Tech. Dig. , pp. 23
- Yamada, S.¹ Hiura, Y.² Yamane, T.³ Amemiya, K.⁴ Ohshima, Y.⁵ Yoshikawa, K.⁶

60
- 0034248817
- N. Yang, W.K. Henson and J.J. Wortman, IEEE Trans. Elec. Dev., 47, p. 1636, 2000.
- (2000) IEEE Trans. Elec. Dev. , vol.47 , pp. 1636
- Yang, N.¹ Henson, W.K.² Wortman, J.J.³

61
- 0019668583
- J.R. Yeargain and C. Kuo, Int. Elec. Dev. Meet. Tech. Dig., p. 24, 1981.
- (1981) Int. Elec. Dev. Meet. Tech. Dig. , pp. 24
- Yeargain, J.R.¹ Kuo, C.²

62
- 0032202806
- C.M. Yih, S.M. Cheng and S.S. Chung, IEEE Trans. Elec. Dev., 45, p. 2343, 1998.
- (1998) IEEE Trans. Elec. Dev. , vol.45 , pp. 2343
- Yih, C.M.¹ Cheng, S.M.² Chung, S.S.³

63
- 0032674653
- K.F. You and C.Y. Wu, IEEE Trans. Elec. Dev., 46, p. 1174, 1999.
- (1999) IEEE Trans. Elec. Dev. , vol.46 , pp. 1174
- You, K.F.¹ Wu, C.Y.²

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