Lasing at 1.28 /spl mu/m of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 11, Issue 5, 2005, Pages 1027-1034

  Tatebayashi, J ^a   Ishida, M ^a   Hatori, N ^a   Ebe, H ^a   Sudou, H ^a   Kuramata, A ^a   Sugawara, M ^a   Arakawa, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Al sub 0.4 Ga sub 0.6 As layer; AlGaAs cladding layer; Blueshift; Emission wavelength shift; InAs GaAs quantum dots; Metal organic chemical vapor deposition; Postgrowth annealing; Quantum dot growth; Quantum dot lasers; Quantum dot lasing

Indexed keywords

ANNEALING; CLADDING (COATING); LIGHT EMISSION; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

AL/SUB 0.4/GA/SUB 0.6/AS LAYER; ALGAAS CLADDING LAYER; INAS-GAAS QUANTUM DOTS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM DOT GROWTH; QUANTUM DOT LASERS; QUANTUM DOT LASING;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 31644450818     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.853788     Document Type: Article

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