Ab initio study of pressure-induced electronic band structure transition in Ge50Sn50 ordered alloy

Materials Letters

Volumn 60, Issue 9-10, 2006, Pages 1144-1146

  Lv, Mengya ^a   Chen, Zhouwen ^a   Liu, Riping ^a  

^a YANSHAN UNIVERSITY   (China)

Author keywords

Bandgap; First principles; Ge50Sn50 ordered alloy; Pressure coefficient

Indexed keywords

BAND STRUCTURE; PHASE TRANSITIONS; PRESSURE EFFECTS;

BANDGAP; FIRST-PRINCIPLES; GE50SN50 ORDERED ALLOY; PRESSURE COEFFICIENT;

GERMANIUM ALLOYS;

EID: 31644449266     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2005.10.096     Document Type: Article

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