Thermoelectric properties of 3C-SiC produced by silicon carbonization

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 763-766

  Masuda, M ^a   Mabuchi, H ^a   Tsuda, H ^a   Matsui, T ^a   Morii, K ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

30 SiC; Carbonization; Silicon wafer; Thermoelectric; Thermoelectric properties

Indexed keywords

CARBONIZATION; DOPING (ADDITIVES); IMPURITIES; SILICON WAFERS; THERMOELECTRICITY; POROUS SILICON; SILICON CARBIDE; THERMOELECTRIC EQUIPMENT;

HIGH DOPED WAFER; TEMPERATURE RANGE; THERMOELECTRICAL APPLICATIONS; 3C-SIC; CARBONIZATION METHODS; EFFECTS OF IMPURITIES; SIMPLE METHOD; THERMOELECTRIC; THERMOELECTRIC PROPERTIES;

SILICON CARBIDE; SILICON WAFERS;

EID: 31644444832     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.763     Document Type: Article

References (8)

1. J.P.Riviere, M.Zaytouni, M.F.Denanot and J.Allain: J. Mater. Sci. B29, 105 (1995)
2. Y.Takeda, K.Nakamura, K.Maeda and Y.Matsushita: Yougyo-Kyokai-Shi (in Japanese) 95(9), 860 (1987)
3. Y.Okamoto, H.Uchino, T.Kawahara and J.Morimoto: Jpn. J. Appl. Phys. 38, 945 (1999)
4. Y.Okamoto, H.Inai, A.Aruga and J.Morimoto: J.Japan Inst. Metals (in Japanese) 63(11), 1443 (1999)
5. C.Pai, K.Koumolo and H.Yanagida: Nippon Seramikkusu Kyoukai Gakujutsu Ronbunshi 97(10), 1170 (1989)
6. K.Kato, K.Asai, Y.Okamoto, J.Morimoto and T.Miyakawa: J. Mater. Res. 14(5), 1752 (1999)
7. K.Matsubara, H.Anno and T.Koyanagi: Materia Japan (in Japanese) 35(9), 950 (1996)
8. K.Koumoto, M.Shimohigoshi, S.Takeda and H.Yanagida: J. Mater. Sci. Lett. 6, 1453-1455 (1987)