Influence of excitation frequency and amplitude on the switching properties of SBT and PZT thin films at 10 MHZ hysteresis frequency

Integrated Ferroelectrics

Volumn 47, Issue , 2002, Pages 101-111

  Kall, U ^a   Bottger U ^a   Lin, Y K ^a   Schneller, T ^a   Waser, R ^b   Schmitz, T ^c   Tiedke, S ^c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c AIXACCT SYSTEMS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; HYSTERESIS; LEAD COMPOUNDS; POLARIZATION; RANDOM ACCESS STORAGE; SWITCHING;

CHEMICAL SOLUTION DEPOSITION (CSD); FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); STRONTIUM BISMUTH TANTALATE; VIRTUAL GROUND MEASUREMENTS;

FERROELECTRIC THIN FILMS;

EID: 31544484043     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580215417     Document Type: Article

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4. O. Lohse, Ph.D. thesis, RWTH Aachen, Germany (2001)
5. aixACCT Systems GmbH, Germany
6. J.F.Scott, The Physics of Ferroelectric Ceramic Thin Films for Memory Applications. Ferroekctrics Review. Gordon and Breach Science, Amsterdam (1998)