From submicron stand-alone capacitor testing to fast pulse switching experiments and testing of fully integrated ferroelectric 1T-1C test structures

Integrated Ferroelectrics

Volumn 67, Issue , 2004, Pages 125-131

  Schmitz, T ^a   Tiedke, S ^a   Ellerkmann, U ^b  

^a AIXACCT SYSTEMS GMBH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DATA PROCESSING; FERROELECTRIC MATERIALS; LIGHT POLARIZATION; SIGNAL TO NOISE RATIO;

FERROELECTRIC MEMORY DEVICES (FERAM); PARASITIC CAPACITANCE; PARASITIC CONTRIBUTION; SUBMICRON SIZED FERROELECTRIC CAPACITORS;

CAPACITORS;

EID: 31544483759     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490898623     Document Type: Article

References (3)

1. F. Peter et al., Submitted to APL.
2. S. Tiedke, T. Schmitz, K. Prume, A. Roelofs, T. Schneller, U. Kall, R. Waser, C. S. Ganpule, V. Nagarajan, A. Stanishevsky, R. Ramesh, "Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope". J Appl. Phys. Lett. 79, 3678 (2001).
3. T. Schmitz, K. Prume, B. Reichenberg, A. Roelofs, R. Waser, and S. Tiedke, In-situ compensation of the parasitic capacitance for nanoscale hysteresis measurements. Accepted for publication in J. Europ. Ceram. Soc.