Effects of Ge doping on micromorphology of mnSi in MnSi∼1.7 and on their thermoelectric transport properties

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 12, 2005, Pages 8562-8570

  Aoyama, Ikuto ^a   Fedorov, Mikhail I ^b   Zaitsev, Vladimir K ^b   Solomkin, Fedor Yu ^b   Eremin, Ivan S ^b   Samunin, Aleksandr Yu ^b   Mukoujima, Mika ^a   Sano, Seijiro ^a   Tsuji, Toshihide ^c  

^a KOMATSU LTD   (Japan)

^b IOFFE INSTITUTE   (Russian Federation)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Anisotropy; Electrical conductivity; Ge doping; Interval; Manganese suicide; Thermal conductivity; Thermoelectric property

Indexed keywords

ANISOTROPY; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; GERMANIUM; MORPHOLOGY; PHONONS; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

GE DOPING; INTERVALS; MANGANESE SUICIDE; THERMOELECTRIC PROPERTY;

MANGANESE COMPOUNDS;

EID: 31544475421     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.8562     Document Type: Article

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