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Integrated Ferroelectrics

Volumn 57, Issue , 2003, Pages 1175-1184

MOCVD of (Ba,Sr)TiO3: Nucleation and growth

(8) Regnery, S a,b Ehrhart, P a Szot, K a Waser, R a Ding, Y a Jia, C L a Schumacher, M b Mcentee, T b

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b AIXTRON AG (Germany)

Author keywords

(ba,Sr)tiO3; Dead layer; Leakage current; MOCVD; Nucleation and growth; Permittivity

Indexed keywords

BARIUM ALLOYS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRODES; GRAIN BOUNDARIES; LEAKAGE CURRENTS; MATHEMATICAL MODELS; NUCLEATION; PERMITTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

DEAD LAYER MODELS; FILM THICKNESS; MULTI WAFER REACTORS;

FERROELECTRIC THIN FILMS;

EID: 31544460038 PISSN: 10584587 EISSN: 16078489 Source Type: Conference Proceeding
DOI: 10.1080/10584580390259605 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.