Dopant profiling in Nix Si1-X gates with secondary-ion-mass spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 399-403

  Janssens, T ^a   Pawlak, M A ^a   Kittl, J A ^a   Fouchier, M ^a   Lauwers, A ^a   Kottantharayil, A ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; DOPING (ADDITIVES); NICKEL COMPOUNDS; SECONDARY ION MASS SPECTROMETRY;

DOPANT REDISTRIBUTION; IONIZATION PROBABILITIES; SILICIDATION;

GATES (TRANSISTOR);

EID: 31544450306     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2141622     Document Type: Article

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