Origin of the SiCH3 peak position shift in SiOC films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 264-268

  Teresa, O H ^a  

^a Chongju University   (South Korea)

Author keywords

Organometallic carbon reaction; Oxidation; Sn1 mechanism; Sn2 mechanism; SiOC films

Indexed keywords

CHEMICAL BONDS; CROSSLINKING; METHANE; ORGANOMETALLICS; OXIDATION; SUBSTITUTION REACTIONS;

ORGANOMETALLIC CARBON REACTION; SN1 MECHANISM; SN2 MECHANISM; SIOC FILMS;

SILICON COMPOUNDS;

EID: 31544440428     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.264     Document Type: Article

References (14)

1. T. Oh: Jpn. J. Appl. Phys. 44 (2005) 4103.
2. T. Homma, M. Yamaguchi, Y. Kutsuzawa and N. Otsuka: Thin Solid Films 340 (1999) 237.
3. S. W. Lim, Y. Shimogaki, Y. Nakano, K. Tada and H. Komiyama: J. Electrochem. Soc. 146 (1999) 4192.
4. D. S. Kim, Y. H. Lee and N. H. Park: Appl. Phys. Lett. 69 (1996) 2776.
5. T. Oh, K. M. Lee and C. K. Choi: Thin Solid Films 475 (2005) 109.
6. B. Cruden, K. Chu, K. Gleason and H. Sawin: J. Electrochem. Soc. 146 (1999) 4590.
7. H. J. Kim, Q. Shao and Y. H. Kim: Surf. Coat. Technol. 171 (2003) 39.
8. T. Oh: Jpn. J. Appl. Phys. 44 (2005) 1409.
9. G. Vayner, K. N. Houk, W. L. Jorgensen and J. I. Brauman: J. Am. Chem. Soc. 126 (2004) 9054.
10. D. Y. Zhang and W. T. Borden: J. Org. Chem. 67 (2002) 3989.
11. N. Vets, M. Smet and W. Dehaen: Tetrahedron Lett. 45 (2004) 7287.
12. L. C. Dias: J. Braz. Chem. Soc. 8 (1997) 289.
13. E. J. Corey, D. Barnes-Seeman and T. W. Lee: Tetrahedron Lett. 38 (1997) 1699.
14. T. W. Dijkstra, R. Duchateau, R. A. V. Santen, A. Messtsma and G. P. A. Yap: J. Am. Chem. Soc. 124 (2002) 9856.