Measurement of the thickness of an insensitive surface layer of a PIN photodiode

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 557, Issue 2, 2006, Pages 684-687

  Akimoto, Y ^a   Inoue, Y ^a   Minowa, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Insensitive surface layer; PIN photodiode; Thickness

Indexed keywords

ALPHA PARTICLES; AUGER ELECTRON SPECTROSCOPY; NUCLEAR ENGINEERING; PARAMETER ESTIMATION; SENSITIVITY ANALYSIS; SILICON; THICKNESS MEASUREMENT; X RAYS;

INSENSITIVE SURFACE LAYERS; PIN PHOTODIODES; PULSE HEIGHT; THICKNESS;

PHOTODIODES;

EID: 31444436433     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.11.158     Document Type: Article

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