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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

Ambient AFMobservations of the crater formation in InAs quantum dots onGaAs (001) vicinal surfaces after evaporation in UHV

(5) Nakamura, A a Titkov, A N b Ichida, M a Evtikhiev, V P b Kryganovskii, K b

a NAGOYA UNIVERSITY (Japan)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CLEAR FACETING; CRATER FORMATION; CRYSTALLOGRAPHIC PLANE; GAAS SUBSTRATES; GAAS SURFACES; GAAS(001); INAS; INAS QUANTUM DOTS; INNER WALLS; STRAIN DISTRIBUTIONS; VICINAL SURFACE;

EVAPORATION; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; ULTRAHIGH VACUUM; VAPORS;

GALLIUM ALLOYS;

EID: 3142772425 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051291 Document Type: Article

Times cited : (4)

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