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Volumn 24 I, Issue , 2004, Pages 3-10

Forward and reverse recovery behaviour of diodes in power converter applications

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MOSFET DEVICES; OPTIMIZATION; POWER CONVERTERS; SEMICONDUCTOR JUNCTIONS; SWITCHES; THYRISTORS;

EID: 3142754073     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (13)

References (9)
  • 1
    • 0012697483 scopus 로고    scopus 로고
    • Effects of external operating conditions on the reverrse recovery behaviour of fast power diodes
    • June
    • N. Y. A. Shammas, M. T. Rahimo, P. T. Hoban,: "Effects of external operating conditions on the reverrse recovery behaviour of fast power diodes",EPE Journal,Vol 8,No 1-2, June1999,pp.11-18.
    • (1999) EPE Journal , vol.8 , Issue.1-2 , pp. 11-18
    • Shammas, N.Y.A.1    Rahimo, M.T.2    Hoban, P.T.3
  • 2
    • 0027831153 scopus 로고
    • Design considerations for fast soft reverse recovery diodes
    • Brighton, U.K., Sept.
    • V. Benda, "Design considerations for fast soft reverse recovery diodes" EPE'93, Brighton, U.K., Sept. 1993 pp 288-292.
    • (1993) EPE'93 , pp. 288-292
    • Benda, V.1
  • 4
    • 3142756823 scopus 로고
    • Somos: Commutation and destructive oscillation in diode circuits
    • May
    • Somos: Commutation and destructive oscillation in diode circuits, AIEE trans. Commun. Elec., pp 162-173. May 1961.
    • (1961) AIEE Trans. Commun. Elec. , pp. 162-173
  • 5
    • 0027886406 scopus 로고
    • Electrical transient of snubber diodes in GTO circuits
    • Brighton, U.K. Sept.
    • Hoban P., Rahimo M., Shammas N.Y.A.: Electrical Transient of snubber diodes in GTO circuits, EPE 93' Conf., Brighton, U.K. pp. 368-373, Sept. 1993
    • (1993) EPE 93' Conf. , pp. 368-373
    • Hoban, P.1    Rahimo, M.2    Shammas, N.Y.A.3
  • 6
    • 84936896634 scopus 로고
    • Reverse recovery processes in silicon power rectifiers
    • Aug.
    • Benda H., Spenke.: Reverse recovery processes in silicon power rectifiers, IEEE Trans. on Electron Devices, Vol. 55 No 8, pp. 60-67, Aug. 1967.
    • (1967) IEEE Trans. on Electron Devices , vol.55 , Issue.8 , pp. 60-67
    • Benda, H.1    Spenke2
  • 8
    • 0006494640 scopus 로고
    • Advantages of the new controlled axial lifetime diode
    • July
    • Lutz J., Scheuermann U.: Advantages of the New Controlled Axial Lifetime Diode, PCIM'94, pp. 163-169, July 1994.
    • (1994) PCIM'94 , pp. 163-169
    • Lutz, J.1    Scheuermann, U.2
  • 9
    • 3142777441 scopus 로고    scopus 로고
    • Freewheeling diode failure Modes in IGBT Applications
    • 7-9 Sept.
    • M.T. Rahimo, N.Y.A. Shammas: Freewheeling diode failure Modes in IGBT Applications. EPE-Lausanne 99 Conf. pp. 1-11, 7-9 Sept. 1999.
    • (1999) EPE-Lausanne 99 Conf. , pp. 1-11
    • Rahimo, M.T.1    Shammas, N.Y.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.