Structural and optical characteristics of InGaN/GaN multi-quantum wells grown on a- and c-plane sapphire substrates

Chinese Physics Letters

Volumn 21, Issue 7, 2004, Pages 1323-1326

  Yu, Hong Bo ^a   Chen, Hong ^a   Li, Dong Sheng ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EXCITONS; III-V SEMICONDUCTORS; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; X RAY DIFFRACTION;

A-PLANE SAPPHIRE; ATOMIC-FORCE-MICROSCOPY; C-PLANE SAPPHIRE SUBSTRATES; EXCITON LOCALIZATION; INGAN/GAN MULTI-QUANTUM WELL; LOCALIZATION EFFECT; MULTIQUANTUM-WELL (MQW); OPTICAL CHARACTERISTICS; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL CHARACTERISTICS;

SEMICONDUCTOR COUNTERS;

EID: 3142735305     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/7/039     Document Type: Article

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