Ion-implantation induced defects in ZnO studied by a slow positron beam

Materials Science Forum

Volumn 445-446, Issue , 2004, Pages 57-59

  Chen, Z Q ^a   Maekawa, M ^a   Sekiguchi, T ^b   Suzuki, R ^c   Kawasuso, A ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Amorphization; Defects; Ion Implantation; Positron Annihilation; ZnO

Indexed keywords

ALUMINUM; AMORPHIZATION; ANNEALING; BINDING ENERGY; CATHODOLUMINESCENCE; CRYSTALLIZATION; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; EXCITONS; IMPURITIES; ION IMPLANTATION; POSITRONS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; ULTRAVIOLET RADIATION;

CRYSTAL QUALITY; POSITRON ANNIHILATION; POSITRON LIFETIME SPECTRA; SLOW POSITRON BEAMS;

ZINC OXIDE;

EID: 3142717006     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.445-446.57     Document Type: Conference Paper

References (6)

1. D. C. Look, Mater. Sci. Eng. B 80 (2001) 383.
2. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zhou, C. Evans, A. J. Nelson and A. V. Hamza, Phys. Rev. B 67 (2003) 094115.
3. P. G. Coleman, Positron Beams and their Applications (World Scientific, Singapore, 2000).
4. Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, T. Sekiguchi, J. Appl. Phys. to be appeared, scheduled issue October 15, 2003
5. A. Van Veen, H. Schut and P. E. Mijnarends, in ref [3], p208.
6. R. B. Gregory, Y. Zhu, Nucl. Instrum. Methods A 290 (1990) 172.