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Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 364-368

InGaAs/GaAs quantum well circular ring lasers fabricated by laser direct writing and pulsed anodic oxidation

Author keywords

A1. Characterization; A1. Etching; B1. Oxides; B3. Laser diodes

Indexed keywords

ANODIC OXIDATION; CHARACTERIZATION; CURRENT DENSITY; ETCHING; LASER PULSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EID: 3142716802     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.055     Document Type: Conference Paper
Times cited : (5)

References (21)
  • 5
    • 3142761591 scopus 로고
    • CTTE lab incorporation, laser diode technology and applications IV
    • Laier R.B. CTTE lab incorporation, laser diode technology and applications IV. SPIE. 1219:1992;268.
    • (1992) SPIE , vol.1219 , pp. 268
    • Laier, R.B.1
  • 9
    • 36449005368 scopus 로고
    • Unidirectional semiconductor ring lasers with racetrack cavities
    • Hohimer J.P., Vawter G.A. Unidirectional semiconductor ring lasers with racetrack cavities. Appl. Phys. Lett. 63:1993;2457.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2457
    • Hohimer, J.P.1    Vawter, G.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.