Static and dynamic characteristics of the 2.5kV/500A IGCTs

Proceedings of the International Conference on Microelectronics

Volumn 24 I, Issue , 2004, Pages 171-173

  Kim, S C ^a   Kim, H W ^a   Seo, K S ^a   Zhang, C L ^a   Kim, E D ^a  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); SEMICONDUCTOR DOPING;

DOPING CONCENTRATION; POWER LOSSES; STORAGE TIME;

THYRISTORS;

EID: 3142695451     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. E. Carroll et al., "IGCT Thyristors : A new approach to superpowerful electronics", Russian electrical Engineering, Vol. 69, No. 7, pp. 54-63, 1998.
2. Satoh et. al., "A new high power device GCT(Gate Commutated Turn-off) Thyristor", EPE 1997.
3. H. Iwamoto et. al., "High-power semiconductor device : a symmetric gate commutated turn-off thyristor", IEE Proc, Electr. Power Appl., 2001.
4. Silvaco TCAD Manuals, Atlas, Silvaco International, Co. USA