Growth mechanism of nanometer-sized SiC and oxidation resistance of SiC-coated diamond particles

Journal of the American Ceramic Society

Volumn 87, Issue 5, 2004, Pages 809-813

  Morisada, Yoshiaki ^a   Miyamoto, Yoshinari ^a   Moriguchi, Hideki ^b   Tsuduki, Katsunori ^b   Ikegaya, Akihiko ^b  

^a OSAKA UNIVERSITY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; DIAMONDS; GRANULAR MATERIALS; GROWTH (MATERIALS); NANOSTRUCTURED MATERIALS; OXIDATION RESISTANCE; PARTICLE SIZE ANALYSIS; REACTION KINETICS; SILICON CARBIDE; THERMAL EFFECTS; THICKNESS CONTROL;

GROWTH MECHANISM; NANOMETER SIZED GRANULES; NANOMETER SIZED SILICON CARBIDE; UNCOATED DIAMOND; VAPOR PHASE REACTION;

CERAMIC COATINGS;

EID: 3142690659     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2004.00809.x     Document Type: Article

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