Intervalence-band THz laser in selectively-doped semiconductor structure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5365, Issue , 2004, Pages 184-193

  Dolguikh, M V ^a   Muravjov, A V ^a   Peale, R E ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERSUBBAND TRANSITIONS; QUANTUM CASCADE LASERS (QCL); SPATIAL SEPARATION; TERAHERTZ LASERS;

COMPUTER SIMULATION; ELECTRON SCATTERING; LASERS; LIGHT ABSORPTION; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; OPTICAL PUMPING; SEMICONDUCTOR DOPING;

SEMICONDUCTOR MATERIALS;

EID: 3142684504     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528383     Document Type: Conference Paper

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