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Volumn 261-263, Issue II, 2004, Pages 1599-1604
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Influence of the surface topography on the micromechanical properties and performance of a CMP finished AIN component for silicon plasma etching
a
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Author keywords
AIN; CMP; Localized nanoindentation; Micro nanotribology; Seliconductor processing components; Surface damage; Surface topography
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL MECHANICAL POLISHING;
CHEMICAL VAPOR DEPOSITION;
DURABILITY;
IN SITU PROCESSING;
PLASMA ETCHING;
SCANNING ELECTRON MICROSCOPY;
SILICON WAFERS;
SLURRIES;
SURFACE PHENOMENA;
SURFACE TOPOGRAPHY;
TRIBOLOGY;
VISCOELASTICITY;
YTTRIUM;
AIN;
CMP;
LOCALIZED NANOINDENTATION;
MICRO/NANOTRIBOLOGY;
SELICONDUCTOR PROCESSING COMPONENTS;
SURFACE DAMAGE;
MATERIALS SCIENCE;
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EID: 3142680851
PISSN: 10139826
EISSN: 16629795
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (10)
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