Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 217-220

  Yamaguchi, Koichi ^a   Yasuda, Yoshikatsu ^a   Kovács, András ^b   Barna, Peter B ^b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3142673161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1331334     Document Type: Article

References (9)

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