Spin depolarization via tunneling effects in asymmetric double quantum dot structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2110-2113

  Sasakura, Hirotaka ^a,b   Adachi, Satoru ^a,b   Muto, Shunichi ^a,b   Song, Hai Zhi ^c   Miyazawa, Toshiyuki ^b,c   Usuki, Tatsuya ^b,c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Asymmetric quantum dots; Time resolved photoluminescence; Tunneling

Indexed keywords

ALUMINUM; ARSENIC; DEPOLYMERIZATION; ELECTROMAGNETIC WAVE EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; EXCITONS; GALLIUM; GROUND STATE; GROWTH (MATERIALS); MAGNETIC FIELDS; PHOTOLUMINESCENCE; SCATTERING; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ASYMMETRIC QUANTUM DOTS; QUANTUM BITS; TIME-RELSOVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142666295     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2110     Document Type: Conference Paper

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